Progress in Infrared Photodetectors Since 2000

Progress in Infrared Photodetectors Since 2000

The first decade of the 21st-century has seen a rapid development in infrared photodetector technology. At the end of the last millennium there were two dominant IR systems, InSb- and HgCdTe-based detectors, which were well developed and available in commercial systems. While these two systems saw improvements over the last twelve years, their change has not nearly been as marked as that of the...

Quantum grid infrared photodetectors

In this letter we introduce a quantum well infrared photodetector ~QWIP! structure, which we refer to as the quantum grid infrared photodetector ~QGIP!. In an ideal structure, a grid pattern with very narrow linewidth is created in the QWIP active region to achieve lateral electron confinement, thereby improving its absorption as well as transport characteristics. In order to realize this detec...

Modeling of High Temperature GaN Quantum Dot Infrared Photodetectors

In this paper, we present calculations for different parameters of quantum dot infrared photodetectors. We considered a structure which includes quantum dots with large conduction-band-offset materials (GaN/AlGaN). Single band effective mass approximation has been applied in order to calculate the electronic structure. Throughout the modeling, we tried to consider the limiting factors which dec...

The Rural-Urban “Digital Divide” in New Zealand: Progress Since September 2000

Noise in single quantum well infrared photodetectors

The noise of the dark current and photocurrent is an important factor in operation of the quantum well infrared photodetectors ~QWIPs!. For typical operating conditions, the main source of fluctuations in QWIPs is generationrecombination noise associated with the excitation of carriers from the QWs into the continuum and their capture into the QWs. For applications the study of noise in QWIPs i...